AlGaN/GaN Heterostructure Field-Effect Transistors with High Al Compositions Fabricated with Selective-Area Regrowth
2001 ◽
Vol 188
(1)
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pp. 223-226
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2006 ◽
Vol 24
(3)
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pp. 624-628
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2012 ◽
Vol 9
(3-4)
◽
pp. 911-914
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